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IGBT dies

IGBT dies

 
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IGBT dies(1.2 kV)

Part number
Type

Size AxB

mm

Thickness

μm

Vss

(V)

lc

(A)

lcm

(A)

V typ.

125 ℃

Max. dies per wafer (W)

or tray (T)

5SMY 76H128O

5SMY 86H1280

SPT*
9.1x9.1
140
1200
57
114
2.1
166 (W)

5SMY 76J1280

5SMY 86J1280

SPT*
10.2 x 10.2
140
1200
75
150
2.1
130(W)

5SMY 76K1280

5SMY 86K1280

SPT*
11.2x11.9
140
1200
100
200
2.1
98 (W)

5SMY 76M128O

5SMY 86M1280

SPT*
13.5x13.5
140
1200
150
300
2.2
71 (W)



IGBT dies(1.7 kV)

Part number
Type

Size AxB

mm

Thickness

μm

Vss

(V)

lc

(A)

lcm

(A)

V typ.

125 ℃

Max. dies per wafer (W)

or tray (T)

5SMY 86G1721
SPT*
8.6 x 8.6
209
1700
50
100
3.0
186 (W)
5SMY 86J1722
SPT*
10x10
209
1700
75
150
3.0
132 (W)

5SMY 76J1732

5SMY 86J1732

SPT*
10x10
190
1700
75
150
2.55
132 (W)

5SMY 76K1722

5SMY 86K1722

SPT*
11.3x11.3
209
1700
100
200
3.0
104 (W)



Diode dies(1.2kV)

Part number
Type

Size AxB

mm

Thickness

μm

V
A

(V) typ.

125 ℃

Max. dies per wafer (W)

or tray (T)

5SLY 76E1200

5SLY 86E1200

SPT*
6.3x6.3
350
1200
50
1.B5
361 (W)

5SLY 76F1200

5SLY 86F1200

SPT*
7.4 x 7.4
350
1200
75
1.85
257 (W)

5SLY 76G12OO

5SLY 86G1200

SPT*
8.4x8.4
350
1200
100
1.85
198 (W)

5SLY 76J1200

5SLY 86J1200

SPT*
10x10
350
1200
150
1.85
137 (W)


(1.7 kV)

Part number
Type

SixeAxB

mm

Thickness

μm

V
A

(V) typ.

125 ℃

Max. dies per wafer (W)

or tray (T)

5SLZ 76E1700
SPT**/FSA
6.6 x 6.6
370
1700
50
1.75
326 (W)
5SLY 86E1700
SPT*
6.6 x 6.6
390
1700
50
2.1
326 (W)
5SLZ 76F1700
SPT**/FSA
7.7 x 7.7
370
1700
75
1.75
237 (W)
5SLY 86F1700
SPT*
7.7 x 7.7
390
1700
75
2.1
237 (W)
5SLY 86G1700
SPT*
8.6x8.6
390
1700
100
2.1
188 (W)
5SLZ 76G1700
SPT**/FSA
6.8x11.4
370
1700
100
1.75
177 (W)
5SLZ 86J1700
SPT**/FSA
10.2 x 10.2
370
1700
150
1.75
131 (W)
5SLY 86J1700
SPT*
10.2 x 10.2
390
1700
150
2.1
131 (W)
5SLZ 76L1700
SPT**/FSA
9.3x15.9
370
1700
225
1.75
92 (W)

5SLY 86M1700

5SLY 12M17OO

SPT*
13.6x13.6
390
1700
300
2.1

69 (W)

25 (T)


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